Method of manufacturing an optoelectronic device
文献类型：专利
| 作者 | KANG, BYUNG-KWON; KANG, JUNG-KOO; JO, YOU-RI; KIM, JONG-DEOG; JEONG, SEUNG-JO; SIN, YOUNG-KUN |
| 发表日期 | 1998-10-13 |
| 专利号 | US5821134 |
| 著作权人 | MAGNACHIP SEMICONDUCTOR, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of manufacturing an optoelectronic device |
| 英文摘要 | Disclosed is a method of producing an electron-absorption modulator having a reverse mesa structure. In the electron-absorption modulator, a first clad of a first conductivity type, an active layer of the first conductivity type, a second clad layer of a second conductivity type and an ohmic contact layer of the second conductivity type are formed on a semiconductor substrate of the first conductivity type. Then, a predetermined mask pattern is formed on the ohmic contact layer. Afterwards, the ohmic contact layer is etched by using the mask pattern. Then, the second clad layer and the active layer below the ohmic contact layer are etched in the form of the reverse mesa structure to expose the first clad layer. Then, the first clad layer is etched at a predetermined depth in the form of a mesa structure. |
| 公开日期 | 1998-10-13 |
| 申请日期 | 1997-06-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40122]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MAGNACHIP SEMICONDUCTOR, LTD. |
| 推荐引用方式 GB/T 7714 | KANG, BYUNG-KWON,KANG, JUNG-KOO,JO, YOU-RI,et al. Method of manufacturing an optoelectronic device. US5821134. 1998-10-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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