Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment
文献类型：专利
| 作者 | SHIM, KYU HWAN; PAEK, MUN CHEOL; CHO, KYOUNG IK |
| 发表日期 | 2000-09-26 |
| 专利号 | US6124147 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment |
| 英文摘要 | The present invention relates to a semiconductor device and, more particularly, to a short-wavelength optoelectronic device and a method for fabricating the same. The optoelectronic device according to the present invention doesn't have to employ an ion implantation process and an ohmic contact to make the n-p junction in the WB compound semiconductor, providing a sufficient efficiency for display. The method according to the present invention comprises the step of a) forming a SiC:AlN super lattice multilayer by alternately forming a SiC epitaxial film and an AlN epitaxial film on a substrate, wherein the AlN film is formed and the SiC film is formed using a single source gas of 1,3disilabutane in an nitrogen plasma-assisted metalorganic molecular beam epitaxy system; and b) applying a thermal treatment to the SiC:AlN super lattice multilayer, thereby a mixed crystal compound having (SiC)x(AlN)1-x quantum wells obtained by a diffusion of SiC film and AlN. |
| 公开日期 | 2000-09-26 |
| 申请日期 | 1998-11-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40128]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | SHIM, KYU HWAN,PAEK, MUN CHEOL,CHO, KYOUNG IK. Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment. US6124147. 2000-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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