Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
文献类型：专利
| 作者 | ITOH, KUNIO; ISHIDA, MASAHIRO |
| 发表日期 | 2001-04-17 |
| 专利号 | US6218207 |
| 著作权人 | MITSUSHITA ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same |
| 英文摘要 | A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer. |
| 公开日期 | 2001-04-17 |
| 申请日期 | 1999-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40129]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUSHITA ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | ITOH, KUNIO,ISHIDA, MASAHIRO. Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same. US6218207. 2001-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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