Method for fabricating semiconductor device having group III nitride
文献类型：专利
| 作者 | ORITA, KENJI; ISHIDA, MASAHIRO; NAKAMURA, SHINJI; YURI, MASAAKI |
| 发表日期 | 2000-09-12 |
| 专利号 | US6117700 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating semiconductor device having group III nitride |
| 英文摘要 | First, n-type contact layer of GaN, n-type cladding layer of AlGaN, active layer of InGaN, first Mg-doped layer of AlGaN and second Mg-doped layer of GaN are grown in this order over a sapphire substrate. Thereafter, the substrate, including the second Mg-doped layer, is exposed to nitrogen plasma for about 40 minutes. As a result, Mg, which has been introduced into the first and second Mg-doped layers, is activated as an acceptor. Thus, p-type cladding layer and p-type contact layer with low resistance and excellent crystallinity can be formed out of the first and second Mg-doped layers, respectively. |
| 公开日期 | 2000-09-12 |
| 申请日期 | 1999-09-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40135]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ORITA, KENJI,ISHIDA, MASAHIRO,NAKAMURA, SHINJI,et al. Method for fabricating semiconductor device having group III nitride. US6117700. 2000-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。