Semiconductor light emitting element, and its manufacturing method
文献类型：专利
| 作者 | YOSHIDA, HIROAKI; ITAYA, KAZUHIKO; SAITO, SHINJI; NISHIO, JOHJI; NUNOUE, SHINYA |
| 发表日期 | 2001-10-16 |
| 专利号 | US6303405 |
| 著作权人 | ALPAD CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting element, and its manufacturing method |
| 英文摘要 | A semiconductor light emitting element of nitride compound semiconductors excellent in cleavability, heat radiation and resistance to leakage is made by epitaxially grow a nitride compound semiconductor layers on a substrate of sapphire, for example, and thereafter separating the substrate. For separating the substrate, there are a technique using a abruption mechanism susceptible to a stress such as a "lift-off layer" and a recesses on a substrate. A technique using laser light to cause a local dense heat stress at the abruption mechanism is effective. A nitride compound semiconductor obtained by separating the substrate may be used as a new substrate to epitaxially grow high-quality nitride compound semiconductors thereon. |
| 公开日期 | 2001-10-16 |
| 申请日期 | 1999-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40138]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ALPAD CORPORATION |
| 推荐引用方式 GB/T 7714 | YOSHIDA, HIROAKI,ITAYA, KAZUHIKO,SAITO, SHINJI,et al. Semiconductor light emitting element, and its manufacturing method. US6303405. 2001-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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