GaN based optoelectronic device and method for manufacturing the same
文献类型：专利
| 作者 | SUGAWARA, HIDETO; ISHIKAWA, MASAYUKI |
| 发表日期 | 2001-04-24 |
| 专利号 | US6221684 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | GaN based optoelectronic device and method for manufacturing the same |
| 英文摘要 | An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of InuAlvGa1-u-vN (0 |
| 公开日期 | 2001-04-24 |
| 申请日期 | 1999-12-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40145]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | SUGAWARA, HIDETO,ISHIKAWA, MASAYUKI. GaN based optoelectronic device and method for manufacturing the same. US6221684. 2001-04-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。