Method of making a III-nitride light-emitting device with increased light generating capability
文献类型：专利
| 作者 | WIERER, JR., JONATHAN J.; KRAMES, MICHAEL R; STEIGERWALD, DANIEL A.; KISH, JR., FRED A.; RAJKOMAR, PRADEEP |
| 发表日期 | 2003-02-04 |
| 专利号 | US6514782 |
| 著作权人 | LUMILEDS LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making a III-nitride light-emitting device with increased light generating capability |
| 英文摘要 | The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>8) superstrate. |
| 公开日期 | 2003-02-04 |
| 申请日期 | 1999-12-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40148]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMILEDS LLC |
| 推荐引用方式 GB/T 7714 | WIERER, JR., JONATHAN J.,KRAMES, MICHAEL R,STEIGERWALD, DANIEL A.,et al. Method of making a III-nitride light-emitting device with increased light generating capability. US6514782. 2003-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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