Removable large area, low defect density films for led and laser diode growth
文献类型：专利
| 作者 | ROMANO, LINDA T.; KRUSOR, BRENT S.; CHUA, CHRISTOPHER L.; JOHNSON, NOBLE M.; WOOD, ROSE M.; WALKER, JACK |
| 发表日期 | 2002-03-12 |
| 专利号 | US6355497 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Removable large area, low defect density films for led and laser diode growth |
| 英文摘要 | A technique based on etching a release layer, for separating the nearly lattice matched substrate from a base substrate is disclosed. A nearly lattice matched substrate for the epitaxial growth of Group-III nitride semiconductor devices and method of fabricating the nearly lattice matched substrate and devices is disclosed. Enhanced ELOG methods are used to create low defect density GaN films. The GaN films are used to grow Group-III nitride LEDs and laser diodes. |
| 公开日期 | 2002-03-12 |
| 申请日期 | 2000-01-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40150]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | ROMANO, LINDA T.,KRUSOR, BRENT S.,CHUA, CHRISTOPHER L.,et al. Removable large area, low defect density films for led and laser diode growth. US6355497. 2002-03-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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