Quantum thin line producing method and semiconductor device
文献类型：专利
| 作者 | FUKUMI, MASAYUKI; FUKUSHIMA, YASUMORI |
| 发表日期 | 2001-09-25 |
| 专利号 | US6294399 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Quantum thin line producing method and semiconductor device |
| 英文摘要 | A Si protruding portion is formed on a Si substrate by opportunely using the general film forming technique, photolithographic technique and etching technique. A second oxide film is formed to fill up a space between Si protruding portions, and the surface is flattened by the CMP method or the like. Then, the second oxide film is subjected to anisotropic etching to form a Si exposed portion at the top of the Si protruding portion. A Si thin line is made to grow in this Si exposed portion, and then a third oxide film for isolating the Si thin line from the Si substrate is formed through oxidation. A quantum thin line is thus formed at low cost without using any special technique of SOI or the like. Furthermore, the substrate surface is flattened, allowing the formation of a single electron device or a quantum effect device to be easy. The quantum thin line is isolated from the Si substrate by the third oxide film, completely confining the electron. With this arrangement, a quantum thin line that has good substrate surface flatness and is able to form a complete electron confining region is formed by using a semiconductor substrate of a Si substrate or the like. |
| 公开日期 | 2001-09-25 |
| 申请日期 | 2000-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40152]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | FUKUMI, MASAYUKI,FUKUSHIMA, YASUMORI. Quantum thin line producing method and semiconductor device. US6294399. 2001-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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