Efficient semiconductor light-emitting device and method
文献类型:专利
作者 | CHOQUETTE, KENT D.; LEAR, KEVIN L.; SCHNEIDER, JR., RICHARD P. |
发表日期 | 1996-02-20 |
专利号 | US5493577 |
著作权人 | SANDIA CORPORATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Efficient semiconductor light-emitting device and method |
英文摘要 | A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). |
公开日期 | 1996-02-20 |
申请日期 | 1994-12-21 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/40169] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SANDIA CORPORATION |
推荐引用方式 GB/T 7714 | CHOQUETTE, KENT D.,LEAR, KEVIN L.,SCHNEIDER, JR., RICHARD P.. Efficient semiconductor light-emitting device and method. US5493577. 1996-02-20. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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