Optoelectronic devices
文献类型：专利
| 作者 | DAWSON, MARTIN DAVID; BESTWICK, TIMOTHY DAVID; TAKIGUCHI, HARUHISA |
| 发表日期 | 1999-05-11 |
| 专利号 | US5903585 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Optoelectronic devices |
| 英文摘要 | A single cavity mode optoelectronic device, such as a VCSEL, an RCLED or a DFB laser diode, comprises an etched-pillar or mesa structure including an optically active region and strain-applying means in the form of a layer of polymer material having a coefficient of thermal expansion which is greater than that of the optically active region. The layer surrounds the optically active region so as to apply a compressive strain to the latter so as to compensate at least partially for temperature-induced changes in the gain spectrum peak of the optically active region caused by ohmic heating of the device. |
| 公开日期 | 1999-05-11 |
| 申请日期 | 1996-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40349]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | DAWSON, MARTIN DAVID,BESTWICK, TIMOTHY DAVID,TAKIGUCHI, HARUHISA. Optoelectronic devices. US5903585. 1999-05-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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