Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry
文献类型：专利
| 作者 | BAEK, JONG HYEOB; LEE, BUN |
| 发表日期 | 2002-06-25 |
| 专利号 | US6410347 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry |
| 英文摘要 | The method of manufacturing VCSEL composed of multiple material layers uses a main measuring laser having same wavelength of that of VCSEL so as to estimate the growth periods required for growing a predetermined thickness of the material layers by analyzing the reflected signal of the main measuring laser and then control the growth time durations of subsequent material layers. This method eliminates the need of pre-knowledge of refractive indexes and the growing speeds of the material layers. Also, an interruptive process for measuring thickness, growth speed or refractive indexes can be omitted so as to perform the entire epitaxial growth in-situ and thus improve the reproducibility and the uniformity. In addition, a subsidiary measuring laser may be used other than the main measuring laser for improving the accuracy of the control of growth time duration, where the subsidiary measuring laser has a different wavelength from that of VCSEL. The subsidiary measuring laser may be used especially in the case of fabricating the VCSEL without any buffer layer. |
| 公开日期 | 2002-06-25 |
| 申请日期 | 1999-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40468]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | BAEK, JONG HYEOB,LEE, BUN. Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry. US6410347. 2002-06-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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