Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique
文献类型：专利
| 作者 | NURMIKKO, ARTO V; SONG, YOON-KYU |
| 发表日期 | 2001-05-15 |
| 专利号 | US6233267 |
| 著作权人 | BROWN UNIVERSITY RESEARCH FOUNDATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique |
| 英文摘要 | A vertical cavity, surface emitting laser (VCSEL) device (10, 10') has a substrate (12) and, disposed over a surface of the substrate, a Group III nitride buffer layer (14) and a mesa structure containing at least a portion of an n-type Group III nitride layer (16). The VCSEL device and mesa structure further include a first multilayer dielectric mirror stack (18a), that is embedded within the first Group III nitride layer by the use of a lateral edge overgrowth (LEO) process; a p-type Group III nitride layer (26); and a p-n junction between the n-type Group III nitride layer and the p-type Group III nitride layer. The p-n junction contains an active multiquantum well region (24). Also contained in the mesa structure is a dielectric (silicon dioxide) layer (20) having a current constricting aperture (20a). The dielectric layer and aperture are buried within one of the n-type Group III nitride layer or the p-type Group III nitride layer, also by the use of the LEO process. A second multilayer dielectric mirror stack (18b) is disposed on top of the mesa structure and over the p-type Group III nitride layer. The first and second multilayer dielectric mirror stacks define a resonant optical cavity structure that passes through the aperture, and that supports an emission of less than 500 nm in the blue/green or NUV spectral regions. |
| 公开日期 | 2001-05-15 |
| 申请日期 | 1999-01-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/40994]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BROWN UNIVERSITY RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | NURMIKKO, ARTO V,SONG, YOON-KYU. Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique. US6233267. 2001-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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