Vertical cavity surface emitting laser diode having a high reflective distributed Bragg reflector
文献类型：专利
| 作者 | TAKAHASHI, MITSUO |
| 发表日期 | 2008-02-12 |
| 专利号 | US7330495 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Vertical cavity surface emitting laser diode having a high reflective distributed Bragg reflector |
| 英文摘要 | The present invention is to provide a vertical cavity surface emitting laser diode (VCSEL) that has a functional distributed Bragg reflector (DBR) comprised of less number of pairs of reflective layers. The VCSEL of the invention include a lower DBR, an upper DBR and an active layer arranged between the upper and lower DBRs. The upper DBR is comprised of a plurality of pairs including GaAs layers and aluminum oxide layers, thus the GaAs layers and the aluminum oxide layers are alternately stacked to each other. Since the refractive index of the aluminum oxide (Al2O3) is 67 at 3 μm and that of the GaAs is 3.51, the difference of these refractive index becomes 85, which is far greater than the combination of the AlAs and the GaAs, thereby decreasing the number of pairs for the DBR. |
| 公开日期 | 2008-02-12 |
| 申请日期 | 2005-03-24 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41117]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | TAKAHASHI, MITSUO. Vertical cavity surface emitting laser diode having a high reflective distributed Bragg reflector. US7330495. 2008-02-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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