中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector

文献类型:专利

作者ZHU, ZUHUA
发表日期2005-04-12
专利号US6878958
著作权人GAZILLION BITS, INC.
国家美国
文献子类授权发明
其他题名Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector
英文摘要A vertical cavity surface-emitting laser (VCSEL) structure and related fabrication methods are described, the VCSEL comprising amorphous dielectric distributed Bragg reflectors (DBRs) while also being capable of fabrication in a single-growth process. Beginning with a substrate such as InP, a first amorphous dielectric DBR structure is deposited thereon, but is limited in width such that some substrate material remains uncovered by the dielectric material. A lateral overgrowth layer is then formed by epitaxially growing material such as InP onto the substrate, the lateral overgrowth layer eventually burying the dielectric DBR structure as well as the previously-uncovered substrate material. Active layers may then be epitaxially grown on the lateral overgrowth layer, and a top dielectric DBR may be deposited thereon using conventional techniques. To save vertical space between DBRs, the first DBR may be deposited in a non-reentrant well formed in the surface of a substrate. A dual lateral overgrowth method for further reducing dislocations above a lower buried dielectric DBR of a VCSEL is also described.
公开日期2005-04-12
申请日期2002-03-26
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/41339]  
专题半导体激光器专利数据库
作者单位GAZILLION BITS, INC.
推荐引用方式
GB/T 7714
ZHU, ZUHUA. Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector. US6878958. 2005-04-12.

入库方式: OAI收割

来源:西安光学精密机械研究所

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