VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device
文献类型：专利
| 作者 | UEKI, NOBUAKI; MUKOYAMA, NAOTAKA; ISHII, RYOJI; NAKAMURA, TAKESHI |
| 发表日期 | 2009-02-24 |
| 专利号 | US7496123 |
| 著作权人 | FUJI XEROX CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device |
| 英文摘要 | A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than π/2 radians and within π radians, centering on the light emitting portion. |
| 公开日期 | 2009-02-24 |
| 申请日期 | 2007-02-15 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41375]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJI XEROX CO., LTD. |
| 推荐引用方式 GB/T 7714 | UEKI, NOBUAKI,MUKOYAMA, NAOTAKA,ISHII, RYOJI,et al. VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device. US7496123. 2009-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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