Lateral injection VCSEL
文献类型：专利
| 作者 | HOBSON, WILLIAM SCOTT; VAKHSHOORI, DARYOOSH |
| 发表日期 | 2000-03-28 |
| 专利号 | US6044100 |
| 著作权人 | LUCENT TECHNOLOGIES, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Lateral injection VCSEL |
| 英文摘要 | A VCSEL comprises a pair of multi-layered mirrors forming an optical cavity resonator having its axis perpendicular to the layers of the mirrors, an active region disposed within the resonator, and a current guide for directing pumping current through an aperture to generate stimulated emission of radiation which propagates along the resonator axis. A portion of the radiation forms an output signal which emerges through at least one of the mirrors. The current guide includes a lateral injection structure disposed between one of the mirrors and the current aperture. The lateral injection structure comprises at least one relatively thin, highly doped semiconductor layer, each of the highly doped layer(s) being located at a node of the standing wave of the intracavity radiation, at least one lower doped semiconductor layer disposed adjacent each of the highly doped layers (e.g., one lower doped layer sandwiched between a pair of highly doped layers), and an etch stop layer disposed between the one mirror and the uppermost highly doped layer. |
| 公开日期 | 2000-03-28 |
| 申请日期 | 1997-12-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41400]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES, INC. |
| 推荐引用方式 GB/T 7714 | HOBSON, WILLIAM SCOTT,VAKHSHOORI, DARYOOSH. Lateral injection VCSEL. US6044100. 2000-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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