Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs)
文献类型：专利
| 作者 | SUN, DECAI; FLOYD, PHIL; FAN, WENJUN |
| 发表日期 | 2012-05-22 |
| 专利号 | US8184668 |
| 著作权人 | NEOPHOTONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs) |
| 英文摘要 | A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided. |
| 公开日期 | 2012-05-22 |
| 申请日期 | 2011-01-06 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41429]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEOPHOTONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | SUN, DECAI,FLOYD, PHIL,FAN, WENJUN. Method for reducing capacitance and improving high frequency performance in vertical cavity surface emitting lasers (VCSELs). US8184668. 2012-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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