Method for accurate growth of vertical-cavity surface-emitting lasers
文献类型：专利
| 作者 | CHALMERS, SCOTT A.; KILLEEN, KEVIN P.; LEAR, KEVIN L. |
| 发表日期 | 1995-03-14 |
| 专利号 | US5397739 |
| 著作权人 | SANDIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for accurate growth of vertical-cavity surface-emitting lasers |
| 英文摘要 | We report a method for accurate growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement to determine the structure of the partially completed VCSEL at a critical point of growth. This information, along with the extracted growth rates, allows imprecisions in growth parameters to be compensated for during growth of the remaining structure, which can then be completed with very accurate critical dimensions. Using this method, we can now routinely grow lasing VCSELs with Fabry-Perot cavity resonance wavelengths controlled to within 0.5%. |
| 公开日期 | 1995-03-14 |
| 申请日期 | 1993-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41439]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANDIA CORPORATION |
| 推荐引用方式 GB/T 7714 | CHALMERS, SCOTT A.,KILLEEN, KEVIN P.,LEAR, KEVIN L.. Method for accurate growth of vertical-cavity surface-emitting lasers. US5397739. 1995-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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