Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same
文献类型：专利
| 作者 | CHENG, CHENG-WEI; LEOBANDUNG, EFFENDI; LI, NING ; SADANA, DEVENDRA K.; SHIU, KUEN-TING
|
| 发表日期 | 2018-11-20 |
| 专利号 | US10135226 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same |
| 英文摘要 | A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8 |
| 公开日期 | 2018-11-20 |
| 申请日期 | 2018-03-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41515]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | CHENG, CHENG-WEI,LEOBANDUNG, EFFENDI,LI, NING,et al. Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same. US10135226. 2018-11-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。