High speed implanted VCSEL
文献类型：专利
| 作者 | SHIEH, CHAN-LONG; LEE, HSING-CHUNG |
| 发表日期 | 2005-06-14 |
| 专利号 | US6906353 |
| 著作权人 | LUMENTUM OPERATIONS LLC |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High speed implanted VCSEL |
| 英文摘要 | A vertical cavity surface emitting laser includes a first mirror region forming a first distributed Bragg reflector, a first cladding region, an active region, a second cladding region including a high electrical resistance implanted region positioned to define a current path, a second mirror region, and a current spreading region. A first electrical contact is positioned on the current spreading region and a second electrical contact is positioned to conduct electrical current in circuit with the first electrical contact through the current path. The current spreading region and the second mirror region cooperate to produce substantially uniform current distribution in the current path. A third mirror region is positioned on the current spreading region. The second and third mirror regions cooperate to provide a complete distributed Bragg reflector. |
| 公开日期 | 2005-06-14 |
| 申请日期 | 2003-11-17 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41524]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM OPERATIONS LLC |
| 推荐引用方式 GB/T 7714 | SHIEH, CHAN-LONG,LEE, HSING-CHUNG. High speed implanted VCSEL. US6906353. 2005-06-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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