Current confinement structure for vertical cavity surface emitting laser
文献类型：专利
| 作者 | ZHU, ZUHUA; WANG, SHIH-YUAN |
| 发表日期 | 2005-04-05 |
| 专利号 | US6876687 |
| 著作权人 | GAZILLION BITS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Current confinement structure for vertical cavity surface emitting laser |
| 英文摘要 | A vertical cavity surface emitting laser (VCSEL) structure and fabrication method therefor are described in which a subsurface air, gas, or vacuum current confinement method is used to restrict the area of electrical flow in the active region. Using vertical hollow shafts to access a subsurface current confinement layer, a selective lateral etching process is used to form a plurality of subsurface cavities in the current confinement layer, the lateral etching process continuing until the subsurface cavities laterally merge to form a single subsurface circumferential cavity that surrounds a desired current confinement zone. Because the subsurface circumferential cavity is filled with air, gas, or vacuum, the stresses associated with oxidation-based current confinement methods are avoided. Additionally, because the confinement is achieved by subsurface cavity structures, overall mechanical strength of the current-confining region is maintained. |
| 公开日期 | 2005-04-05 |
| 申请日期 | 2003-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41597]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | GAZILLION BITS, INC. |
| 推荐引用方式 GB/T 7714 | ZHU, ZUHUA,WANG, SHIH-YUAN. Current confinement structure for vertical cavity surface emitting laser. US6876687. 2005-04-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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