中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
VCSEL with at least one through substrate via

文献类型:专利

作者CHESKIS, DAVID
发表日期2017-07-11
专利号US9705284
著作权人II-VI DELAWARE, INC.
国家美国
文献子类授权发明
其他题名VCSEL with at least one through substrate via
英文摘要In an illustrative embodiment, a VCSEL comprises a substrate, a first DBR on a first major surface of the substrate, an active region on the first DBR, a second DBR on the active region, and electrically conductive vias that pass through the substrate and provide ohmic contact with the DBRs so that electrical connections to both DBRs are available on the substrate side of the VCSEL. The VCSEL is formed by forming a first DBR on a first major surface of a substrate, forming an active region on the first DBR, forming a second DBR on the active region, thinning the substrate, making a first via hole through the substrate to the first DBR, making a second via hole through the substrate and the first DBR, filling the first via hole with an electrically conducting material to contact the first DBR, filling the second via hole with an electrically conducting material, and coupling the second via hole to the second DBR.
公开日期2017-07-11
申请日期2015-12-03
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/41645]  
专题半导体激光器专利数据库
作者单位II-VI DELAWARE, INC.
推荐引用方式
GB/T 7714
CHESKIS, DAVID. VCSEL with at least one through substrate via. US9705284. 2017-07-11.

入库方式: OAI收割

来源:西安光学精密机械研究所

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