Polarization mode switching semiconductor laser apparatus
文献类型：专利
| 作者 | TANAKA, HIDENAO; WATABE, AKINORI; SHIMADA, JUNICHI; KATAGIRI, YOSHITADA; SUZUKI, YOSHIO |
| 发表日期 | 1996-03-05 |
| 专利号 | US5497390 |
| 著作权人 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Polarization mode switching semiconductor laser apparatus |
| 英文摘要 | A semiconductor laser apparatus includes a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a second electrode, and a pair of resonator mirrors. The semiconductor substrate has a first electrode on one surface. The first cladding layer is formed on the other surface of the semiconductor substrate. The active layer is placed on the cladding layer. The second cladding layer is placed on the active layer. The second electrode is placed on the second cladding layer. The pair of resonator mirrors are placed in a waveguide direction perpendicular to the surfaces of the semiconductor substrate to oppose each other. The active layer is constituted by a quantum well layer having a tensilely strain. The second electrode is separated into portions not less than two portions. |
| 公开日期 | 1996-03-05 |
| 申请日期 | 1993-01-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41651]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 推荐引用方式 GB/T 7714 | TANAKA, HIDENAO,WATABE, AKINORI,SHIMADA, JUNICHI,et al. Polarization mode switching semiconductor laser apparatus. US5497390. 1996-03-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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