Semiconductor guided-wave optical device and method of fabricating thereof
文献类型：专利
| 作者 | AOKI, MASAHIRO; SATO, HIROSHI; SUZUKI, MAKOTO; KOMORI, MASAAKI |
| 发表日期 | 1998-06-09 |
| 专利号 | US5764842 |
| 著作权人 | OCLARO JAPAN, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor guided-wave optical device and method of fabricating thereof |
| 英文摘要 | After a shadow mask that is separate from a semiconductor substrate is used and is arranged over the semiconductor substrate via a wafer holder installed in a reaction chamber of a vapor-phase epitaxial system so that a predetermined space d can be secured, a semiconductor thin film crystal including a core layer and a cladding layer is grown by organometallic vapor-phase epitaxy. A core layer wherein the thickness of a grown film in an area which is opposite to a masking part of the shadow mask on the semiconductor substrate is reduced in the tapered shape can be readily obtained by introducing this process for growth in a normal process for fabricating a semiconductor guided-wave optical device. A semiconductor guided-wave optical device and a method of fabricating thereof wherein the thickness of a film which is to be a waveguide is tapered and the width of the waveguide is tapered without deteriorating crystallinity by a new crystal growing method using this shadow mask are obtained. It is desirable that the surface of the shadow mask be coated with a dielectric cap layer. Hereby, a beam expander-integrated laser diode which can be fabricated by an extremely simple method and enables extremely efficient optical coupling with a fiber can be realized. |
| 公开日期 | 1998-06-09 |
| 申请日期 | 1996-03-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41653]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OCLARO JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | AOKI, MASAHIRO,SATO, HIROSHI,SUZUKI, MAKOTO,et al. Semiconductor guided-wave optical device and method of fabricating thereof. US5764842. 1998-06-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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