Single-mode DBR laser with improved phase-shift section
文献类型：专利
| 作者 | HWANG, WEN-YEN; ANSELM, KLAUS ALEXANDER; ZHENG, JUN |
| 发表日期 | 2003-08-19 |
| 专利号 | US6608855 |
| 著作权人 | APPLIED OPTOELECTRONICS, INC. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Single-mode DBR laser with improved phase-shift section |
| 英文摘要 | An edge-emitting laser for generating single-longitudinal mode laser light at a lasing wavelength. A semiconductor active region amplifies, by stimulated emission, light in the laser cavity at the lasing wavelength. A first grating section adjacent to the active region and having a first reflectance and a first effective index of refraction. A second grating section adjacent to the active region and having a second reflectance and the first effective index of refraction. The first and second grating sections have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section is disposed adjacent to the active region and between the first and second grating sections and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve single-longitudinal mode operation. |
| 公开日期 | 2003-08-19 |
| 申请日期 | 2002-05-31 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41655]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED OPTOELECTRONICS, INC. |
| 推荐引用方式 GB/T 7714 | HWANG, WEN-YEN,ANSELM, KLAUS ALEXANDER,ZHENG, JUN. Single-mode DBR laser with improved phase-shift section. US6608855. 2003-08-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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