Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure
文献类型：专利
| 作者 | MORITA, ETSUO; IKEDA, MASAO; KAWAI, HIROJI |
| 发表日期 | 2002-12-31 |
| 专利号 | US6501154 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure |
| 英文摘要 | There are provided a semiconductor substrate and a semiconductor laser using the semiconductor substrate which promises smooth and optically excellent cleaved surfaces and is suitable for fabricating semiconductor lasers using nitride III-V compound semiconductors. Using a semiconductor substrate, such as GaN substrate, having a major surface substantially normal to a {0001}-oriented face, e.g. {01-10}-oriented face or {11-20}-oriented face, or offset within ±5° from these faces, nitride III-V compound semiconductor layers are epitaxially grown on the substrate to form a laser structure. To make cavity edges, the GaN substrate is cleaved together with the overlying III-V compound semiconductor layers along high-cleavable {0001}-oriented faces. |
| 公开日期 | 2002-12-31 |
| 申请日期 | 1998-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41657]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | MORITA, ETSUO,IKEDA, MASAO,KAWAI, HIROJI. Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure. US6501154. 2002-12-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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