Reliable AlInGaAs/AlGaAs strained-layer diode lasers
文献类型：专利
| 作者 | WANG, CHRISTINE A.; WALPOLE, JAMES N.; CHOI, HONG K.; DONNELLY, JOSEPH P. |
| 发表日期 | 1993-06-01 |
| 专利号 | US5216684 |
| 著作权人 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Reliable AlInGaAs/AlGaAs strained-layer diode lasers |
| 英文摘要 | A strained quantum-well diode laser with an AlInGaAs active layer and AlGaAs cladding and/or confining layers on a GaAs substrate is provided. AlInGaAs/AlGaAs lasers can be configured in laser geometries including ridge, waveguide, buried heterostructure, oxide-defined, proton-defined, narrow-stripe, broad-stripe, coupled-stripe and linear arrays using any epitaxial growth technique. Broad-stripe devices were fabricated in graded-index separate confinement heterostructures, grown by organometallic vapor phase epitaxy on GaAs substrates, containing a single AlyInxGal-x-yAs quantum well with x between 0.14 and 0.12 and y between 0.05 and 0.17. With increasing Al content, emission wavelengths from 890 to 785 nm were obtained. Threshold current densities, Jth's, less than 200 A cm-2 and differential quantum efficiencies in the range 71 to 88 percent were observed. |
| 公开日期 | 1993-06-01 |
| 申请日期 | 1990-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41664]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
| 推荐引用方式 GB/T 7714 | WANG, CHRISTINE A.,WALPOLE, JAMES N.,CHOI, HONG K.,et al. Reliable AlInGaAs/AlGaAs strained-layer diode lasers. US5216684. 1993-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。