埋め込み型半導体レーザおよびその製造方法
文献类型：专利
| 作者 | 井上 武史; 山口 朗; 入田 丈司 |
| 发表日期 | 1999-04-16 |
| 专利号 | JP2913327B2 |
| 著作权人 | 光計測技術開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 埋め込み型半導体レーザおよびその製造方法 |
| 英文摘要 | PURPOSE:To form a window structure and a buried layer without allowing an active layer to come into contact with the atmosphere by using the plane of [110] as a growth stop plane. CONSTITUTION:After the formation of an n-type clad layer 12 and an n-type guide layer 13 in a [100] n-type GaAs substrate 11, a diffraction grating 14 is formed on the n-type guide layer 13. Then, a mesa stripe is formed. In succession, an n-type buffer layer 15, an active layer 16, a p-type clad first layer 17, an n-type block layer 18, a p-type clad second layer 19, and a p-type cap layer 20 are grown in this order. When an attempt is made to select a condition where the n-type buffer layer 15, the active layer 16, and the p-type clad first layer 17 are required to form the plane of [110] as the growth stop plane, a roof type structure is obtained so that the active layer 16 may be separated from the top of the mesa and from the side of the mesa. After the mesa is covered with the plane of [110], the n-type block layer 18 is formed in such a manner that it may surround the mesa. A p-type electrode 21 is installed on a p-type cap layer 20 where an n-type electrode 22 is installed on the rear side of the substrate 1 This construction makes it possible to manufacture a buried type semiconductor laser with a window structure without bringing the active layer in contact with the atmosphere. |
| 公开日期 | 1999-06-28 |
| 申请日期 | 1990-07-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41665]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光計測技術開発株式会社 |
| 推荐引用方式 GB/T 7714 | 井上 武史,山口 朗,入田 丈司. 埋め込み型半導体レーザおよびその製造方法. JP2913327B2. 1999-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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