High-power semiconductor laser device in which near-edge portions of active layer are removed
文献类型：专利
| 作者 | HAYAKAWA, TOSHIRO |
| 发表日期 | 2003-05-20 |
| 专利号 | US6567444 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High-power semiconductor laser device in which near-edge portions of active layer are removed |
| 英文摘要 | In a semiconductor laser device, an active region, including a quantum well layer sandwiched between upper and lower optical waveguide layers, is formed on a substrate. A near-edge portion of the active region is etched down to a mid-thickness of the lower optical waveguide layer. A non-absorbing layer, made of a semiconductor material having a bandgap greater than photon energy of laser light generated in the active region, is formed over the active region. An etching stop layer is formed at the mid-thickness location in the lower optical waveguide layer so as to selectively stop the etching of the near-edge portion of the active region. An electron barrier layer, made of a semiconductor material having a bandgap greater than the bandgap of the upper optical waveguide layer, is formed at a mid-thickness location in the upper optical waveguide layer. |
| 公开日期 | 2003-05-20 |
| 申请日期 | 2001-03-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41672]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | HAYAKAWA, TOSHIRO. High-power semiconductor laser device in which near-edge portions of active layer are removed. US6567444. 2003-05-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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