A semiconductor laser device and a method of growing a semiconductor laser device
文献类型：专利
| 作者 | DUGGAN, GEOFFREY |
| 发表日期 | 1999-02-17 |
| 专利号 | EP0784361B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | A semiconductor laser device and a method of growing a semiconductor laser device |
| 英文摘要 | A semiconductor laser has an n-type cladding layer (12), a lower optical guiding layer (13), an active layer (14), an upper optical guiding layer (15), a p-type cladding layer (17) and a p-type capping layer (18). A thin, heavily p-type delta doped layer (16) is provided at the interface between the upper optical guiding layer and the p-type cladding layer. This increases the potential barrier for electrons passing from the upper optical guiding layer to the p-type cladding layer, thereby reducing the leakage of electrons into the p-type cladding layer. |
| 公开日期 | 1999-02-17 |
| 申请日期 | 1996-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41676]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | DUGGAN, GEOFFREY. A semiconductor laser device and a method of growing a semiconductor laser device. EP0784361B1. 1999-02-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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