Semiconductor laser device and method for fabricating thereof
文献类型：专利
| 作者 | HOSHI, NOZOMU; NAGASAKI, HIROKI |
| 发表日期 | 2005-07-19 |
| 专利号 | US6920167 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for fabricating thereof |
| 英文摘要 | A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured portion having a ridge stripe pattern, and the both sides of the mesa structured portion are buried with a current blocking layer. The laser device includes the current blocking layer having a pit-like recess penetrating thereof and extending towards the compound semiconductor substrate, and a portion of the recess other than that penetrating the current blocking layer being covered or buried with an insulating film or a compound semiconductor layer with a high resistivity. The compound semiconductor substrate and the electrode layer thus can be kept insulated in an area other than a current injection area, thereby non-emissive failure due to short-circuit is prevented. |
| 公开日期 | 2005-07-19 |
| 申请日期 | 2003-09-18 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41682]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | HOSHI, NOZOMU,NAGASAKI, HIROKI. Semiconductor laser device and method for fabricating thereof. US6920167. 2005-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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