Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium
文献类型：专利
| 作者 | KIMURA, TATSUYA; ISHIDA, TAKAO |
| 发表日期 | 1998-09-29 |
| 专利号 | US5814534 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium |
| 英文摘要 | In a method for doping with beryllium, when epitaxially growing a III-V compound semiconductor, (MeCP)2Be is employed as a dopant source. Since (MeCP)2Be has a lower vapor pressure than diethylberyllium (DEBe) which is conventionally employed as the dopant source doping control is facilitated. In addition, since (MeCP)2Be having a higher purity than DEBe is easily obtained, impurities such as oxygen are not incorporated into the active layer during doping, whereby a high quality p type layer is realized. |
| 公开日期 | 1998-09-29 |
| 申请日期 | 1995-08-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41684]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KIMURA, TATSUYA,ISHIDA, TAKAO. Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium. US5814534. 1998-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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