Semiconductor laser with constant differential quantum efficiency or constant optical power output
文献类型:专利
作者 | MOZER, ALBRECHT; LOSCH, KURT |
发表日期 | 1989-06-13 |
专利号 | US4839901 |
著作权人 | ALCATEL N.V. |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser with constant differential quantum efficiency or constant optical power output |
英文摘要 | A semiconductor laser is disclosed whose front or rear surface is provided with a multilayer dielectric and/or reflective coating in such a way that either a temperature-independent differential quantum efficiency or a temperature-independent power output is obtained. The sequence of layers is chosen so that the reflection coefficient decreases with increasing light wavelength. (In other laser systems, it may be necessary for the reflection coefficient to increase). |
公开日期 | 1989-06-13 |
申请日期 | 1988-08-24 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/41687] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | ALCATEL N.V. |
推荐引用方式 GB/T 7714 | MOZER, ALBRECHT,LOSCH, KURT. Semiconductor laser with constant differential quantum efficiency or constant optical power output. US4839901. 1989-06-13. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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