Blue light-emitting device
文献类型:专利
| 作者 | NITTA, KOICHI |
| 发表日期 | 1998-08-25 |
| 专利号 | US5798537 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Blue light-emitting device |
| 英文摘要 | There is disclosed a blue light emitting device having a laminated structure, which comprises a buffer layer made of a first conductivity type GaN-based semiconductor, a first cladding layer made of the first conductivity type GaN-based semiconductor, an active layer made of a substantially intrinsic GaN-based semiconductor, and a second cladding layer made of a second conductivity type GaN-based semiconductor, on a conductive substrate such as a conductive sapphire substrate. The GaN-based semiconductors of the present invention are made of quaternary compound semiconductor layers, and preferably made of InxAyGa1-x-yN whose mole fraction values x, y satisfy 0=x=1, 0=y=1 and x+y= The mole fraction values x, y are selected to obtain desired luminous wavelength and intensity. |
| 公开日期 | 1998-08-25 |
| 申请日期 | 1996-08-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41691] ![]() |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | NITTA, KOICHI. Blue light-emitting device. US5798537. 1998-08-25. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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