Self-pulsation type semiconductor laser
文献类型：专利
| 作者 | KAN, YASUO |
| 发表日期 | 2006-08-15 |
| 专利号 | US7092422 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Self-pulsation type semiconductor laser |
| 英文摘要 | In a self-pulsation type semiconductor laser, a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type having a striped ridge portion are successively stacked on a semiconductor substrate of the first conductivity type. In an embedding layer formed on either side surface of the ridge portion and on either flat portion other than the ridge portion of the second clad layer, a saturable absorption layer is provided on a material layer having a refractive index equal to or greater than that of the second clad layer and not absorbing laser light. |
| 公开日期 | 2006-08-15 |
| 申请日期 | 2003-11-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41694]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAN, YASUO. Self-pulsation type semiconductor laser. US7092422. 2006-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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