Semiconductor laser device and optical disk unit using the same
文献类型:专利
作者 | YAMAMOTO, KEI; OHBAYASHI, KEN |
发表日期 | 2010-09-21 |
专利号 | US7801194 |
著作权人 | SHARP KABUSHIKI KAISHA |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Semiconductor laser device and optical disk unit using the same |
英文摘要 | In a semiconductor laser device having an oscillation wavelength larger than 760 nm and smaller than 800 nm, at least a lower clad layer, a lower guide layer, an active region, an upper guide layer and an upper clad layer are supported by a GaAs substrate, the active region having a quantum well structure in which one or more well layers and barrier layers are stacked. The one or more well layers and the barrier layers are formed of any one of InGaP, InGaAsP and GaAsP, and the upper and/or lower guide layer is formed of AlzGa1−zAs (0.20 |
公开日期 | 2010-09-21 |
申请日期 | 2003-06-30 |
状态 | 授权 |
源URL | [http://ir.opt.ac.cn/handle/181661/41702] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | YAMAMOTO, KEI,OHBAYASHI, KEN. Semiconductor laser device and optical disk unit using the same. US7801194. 2010-09-21. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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