Semiconductor laser element and laser device using the same element
文献类型：专利
| 作者 | MURO, KIYOFUMI; FUJIMOTO, TSUYOSHI; YOSHIDA, YUJI; YAMADA, YOSHIKAZU; ISHIZAKA, SHOJI |
| 发表日期 | 1995-11-14 |
| 专利号 | US5467364 |
| 著作权人 | MITSUI PETROCHEMICAL INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element and laser device using the same element |
| 英文摘要 | A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile. |
| 公开日期 | 1995-11-14 |
| 申请日期 | 1994-08-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41703]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUI PETROCHEMICAL INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | MURO, KIYOFUMI,FUJIMOTO, TSUYOSHI,YOSHIDA, YUJI,et al. Semiconductor laser element and laser device using the same element. US5467364. 1995-11-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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