Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
文献类型：专利
| 作者 | YOSHIZUMI, YUSUKE; ENYA, YOHEI; KYONO, TAKASHI; ADACHI, MASAHIRO; AKITA, KATSUSHI; UENO, MASAKI; SUMITOMO, TAKAMICHI; TOKUYAMA, SHINJI; KATAYAMA, KOJI; NAKAMURA, TAKAO |
| 发表日期 | 2011-04-26 |
| 专利号 | US7933303 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device |
| 英文摘要 | Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes. |
| 公开日期 | 2011-04-26 |
| 申请日期 | 2010-07-27 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41707]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YOSHIZUMI, YUSUKE,ENYA, YOHEI,KYONO, TAKASHI,et al. Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device. US7933303. 2011-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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