A method of fabricating a semiconductor laser device having clad and contact layers respectively doped with Mg
文献类型：专利
| 作者 | MORIMOTO, TAIJI; SHIBATA, ZENKICHI; ISHIZUMI, TAKASHI; MIYAZAKI, KEISUKE; HATA, TOSHIO; OHITSU, YOSHINORI |
| 发表日期 | 1999-04-28 |
| 专利号 | EP0693810B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | A method of fabricating a semiconductor laser device having clad and contact layers respectively doped with Mg |
| 英文摘要 | A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film (8) including an active layer (5) for use of laser beam oscillation is stacked on a substrate (2). Then a clad layer (9) composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer (10) composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer (10) and low in carrier concentration is removed. The active layer (5) for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted. |
| 公开日期 | 1999-04-28 |
| 申请日期 | 1995-07-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41712]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MORIMOTO, TAIJI,SHIBATA, ZENKICHI,ISHIZUMI, TAKASHI,et al. A method of fabricating a semiconductor laser device having clad and contact layers respectively doped with Mg. EP0693810B1. 1999-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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