Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same
文献类型：专利
| 作者 | MATSUMOTO, MITSUHIRO; OHBAYASHI, KEN |
| 发表日期 | 1997-01-07 |
| 专利号 | US5592502 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same |
| 英文摘要 | A semiconductor laser element includes: a semiconductor laminated structure for emitting a laser light, including an active layer interposed between a first cladding layer of a first-conductivity type and a second cladding layer of a second-conductivity type, the first cladding layer and the semiconductor layer having lower refractive indices than that of the active layer; and a current light confining means including a stripe-shaped semiconductor layer of the second-conductivity type formed on a surface of the second cladding layer on a side opposite to the active layer, for confining a laser driving current and the laser light in a region of the active layer corresponding to the stripe-shaped semiconductor layer, wherein the refractive index of the first cladding layer is larger than that of the second cladding layer in the semiconductor laminated structure, and the semiconductor laminated structure includes at least one semiconductor layer of the first-conductivity type having a lower refractive index than that of the first cladding layer, disposed between the first cladding layer and the active layer. |
| 公开日期 | 1997-01-07 |
| 申请日期 | 1994-10-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41716]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MATSUMOTO, MITSUHIRO,OHBAYASHI, KEN. Semiconductor laser element and method for adjusting self-induced oscillation intensity of the same. US5592502. 1997-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。