Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same
文献类型：专利
| 作者 | LIM, SUI F.; CHANG-HASNAIN, CONNIE J. |
| 发表日期 | 1998-05-26 |
| 专利号 | US5757837 |
| 著作权人 | CALIFORNIA, UNIVERSITY OF, THE, REGENTS OF, THE |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same |
| 英文摘要 | A vertical-cavity surface emitting laser is constructed with an intracavity quantum well photodetector. The quantum well photodetector is placed at an optical intensity peak at the Fabry-Perot wavelength. The device may include a current confinement layer in the form of an oxidation layer, an air gap, or proton implantation. The device may be formed with a semi-insulating substrate, a p+ doped substrate, or an n+ doped substrate. Embodiments of the invention include an air bridge contact, a ridge waveguide structure, and buried heterostructure layers. |
| 公开日期 | 1998-05-26 |
| 申请日期 | 1996-10-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41722]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CALIFORNIA, UNIVERSITY OF, THE, REGENTS OF, THE |
| 推荐引用方式 GB/T 7714 | LIM, SUI F.,CHANG-HASNAIN, CONNIE J.. Intracavity quantum well photodetector integrated within a vertical-cavity surface-emitting laser and method of operating same. US5757837. 1998-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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