Distributed feedback semiconductor laser for outputting beam of single wavelength
文献类型:专利
作者 | MORI, HIROSHI; KIKUGAWA, TOMOYUKI; TAKAHASHI, YOSHIO; FUJITA, MOTOAKI |
发表日期 | 2006-06-20 |
专利号 | US7065123 |
著作权人 | ANRITSU CORPORATION |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Distributed feedback semiconductor laser for outputting beam of single wavelength |
英文摘要 | First and second diffraction grating layers are provided above a semiconductor substrate, and are spaced from each other in an output direction of a beam with a flat connecting layer sandwiched therebetween. An active layer is disposed above or below the first and second diffraction grating layers and the connecting layer. A cladding layer is disposed above the active layer or above the first and second diffraction grating layers and the connecting layer. A diffraction grating including the first and second diffraction grating layers has a plurality of slits penetrating from an upper surface to a lower surface that are perpendicular to the output direction of the beam. The connecting layer is formed from two layers grown epitaxially in a direction perpendicular to the output direction of the beam. One of the two layers is formed of the same material as the first and second diffraction grating layers. |
公开日期 | 2006-06-20 |
申请日期 | 2003-06-13 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/41727] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | ANRITSU CORPORATION |
推荐引用方式 GB/T 7714 | MORI, HIROSHI,KIKUGAWA, TOMOYUKI,TAKAHASHI, YOSHIO,et al. Distributed feedback semiconductor laser for outputting beam of single wavelength. US7065123. 2006-06-20. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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