Semiconductor laser device having high optical intensity and reliability
文献类型：专利
| 作者 | YOSHIZAWA, MISUZU; UOMI, KAZUHISA; KAWANO, TOSHIHIRO; ONO, YUICHI; KAJIMURA, TAKASHI |
| 发表日期 | 1989-01-24 |
| 专利号 | US4800565 |
| 著作权人 | HITACHI, LTD., A CORP. OF JAPAN |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device having high optical intensity and reliability |
| 英文摘要 | Disclosed is a semiconductor laser wherein an interface layer is provided on an upper cladding layer formed on an active layer, the interface layer having a smaller Al mole ratio than that of the upper cladding layer, thereby preventing oxidation of the semiconductor surface which is exposed to the atmosphere, and thus improving the crystallizability of a semiconductor layer which is to be formed subsequently. By setting the refractive index of this semiconductor layer so as to be smaller than that of the upper cladding layer, light can be confined in the active layer at increased efficiency. |
| 公开日期 | 1989-01-24 |
| 申请日期 | 1987-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41739]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD., A CORP. OF JAPAN |
| 推荐引用方式 GB/T 7714 | YOSHIZAWA, MISUZU,UOMI, KAZUHISA,KAWANO, TOSHIHIRO,et al. Semiconductor laser device having high optical intensity and reliability. US4800565. 1989-01-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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