光増幅器および光デバイス
文献类型：专利
| 作者 | 西村 三千代 |
| 发表日期 | 1998-02-06 |
| 专利号 | JP2744455B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 光増幅器および光デバイス |
| 英文摘要 | PURPOSE:To obtain a light amplifier having characteristics as a progressive-wave-type light amplifier and being connectable with an optical fiber and the like in a relatively simple way, by making the light amplifier provided with a light incidence element and a light emission element formed in different places within the same plane and with a light amplification region prepared in a bent form and by other means. CONSTITUTION:A light amplifier 11 for which a semiconductor laser structure is used is made to have a light incidence element and a light emission element formed in different places within the same plane and a light amplification region provided for amplifying a light incident from the light incidence element and emitting it from the light emission element and prepared in a bent form, a non-reflective coating film 12 being applied on a surface whereon the light incidence element and the light emission element are formed, and a reflecting element for making the incident light proceed along the light amplification region being provided inside the light amplifier 1 For instance, an electrode 14 is formed in the shape of U on the upper surface of the light amplifier 11 and, consequently, the light amplification region in an active layer 15 is formed also in the shape of U. As the aforesaid reflecting element, end faces 131 and 132 inclined at an angle of about 45 deg. to the proceeding direction of the light are formed by etching. |
| 公开日期 | 1998-04-28 |
| 申请日期 | 1989-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41742]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 西村 三千代. 光増幅器および光デバイス. JP2744455B2. 1998-02-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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