Method for fabricating optical semiconductor device
文献类型：专利
| 作者 | SAKATA, YASUTAKA |
| 发表日期 | 1998-05-26 |
| 专利号 | US5756373 |
| 著作权人 | NEC ELECTRONICS CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method for fabricating optical semiconductor device |
| 英文摘要 | In a fabricating method of an optical semiconductor device, a pair of SiO2 films are formed on an n-InP substrate so as to have a large width in a region I (laser region) and a small width in a region II (optical waveguide region) and have the same gap interval therebetween in the regions I and II, and then an InGaAsP optical guide layer, a MQW (multiquantum well) active layer comprising InGaAsP quantum well layers and InGaAsP barrier layers, and a p-InP layer are selectively grown by MOVPE (metal-organic vapor phase epitaxial growth) method, whereby compressive lattice strain is introduced in the InGaAsP quantum well layers of the region I, and tensile lattice strain is introduced in the InGaAsP quantum well layers of the region II.\! |
| 公开日期 | 1998-05-26 |
| 申请日期 | 1996-04-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41755]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC ELECTRONICS CORPORATION |
| 推荐引用方式 GB/T 7714 | SAKATA, YASUTAKA. Method for fabricating optical semiconductor device. US5756373. 1998-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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