Semiconductor optical integrated device
文献类型：专利
| 作者 | YONEDA, YOSHIHIRO; YANAGISAWA, MASAKI; KOYAMA, KENJI; KOBAYASHI, HIROHIKO; HIRATSUKA, KENJI |
| 发表日期 | 2015-02-24 |
| 专利号 | US8964809 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical integrated device |
| 英文摘要 | A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer. |
| 公开日期 | 2015-02-24 |
| 申请日期 | 2012-08-29 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41757]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | YONEDA, YOSHIHIRO,YANAGISAWA, MASAKI,KOYAMA, KENJI,et al. Semiconductor optical integrated device. US8964809. 2015-02-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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