Semiconductor laser and production method thereof
文献类型：专利
| 作者 | NISHIKAWA, TAKASHI; UEMURA, NOBUYUKI; KAMIYAMA, SATOSHI |
| 发表日期 | 1998-04-21 |
| 专利号 | US5742629 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and production method thereof |
| 英文摘要 | A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers. |
| 公开日期 | 1998-04-21 |
| 申请日期 | 1996-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41762]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | NISHIKAWA, TAKASHI,UEMURA, NOBUYUKI,KAMIYAMA, SATOSHI. Semiconductor laser and production method thereof. US5742629. 1998-04-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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