半導体レ-ザ装置の製造方法
文献类型：专利
| 作者 | 宮永 和恒; 杉野 隆; 広瀬 正則; 山本 敦也; ▲吉▼川 昭男 |
| 发表日期 | 1996-02-07 |
| 专利号 | JP1996012945B2 |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置の製造方法 |
| 英文摘要 | PURPOSE:To dispense with flaws for cleavage as well as to reduce the noise due to the reflection of laser light from the bottom surfaces of grooves by a method wherein, after the grooves for forming reflective surfaces are formed by etching, grooves for cleavage are each formed on the bottom parts of the, grooves by, etching. CONSTITUTION:A clad layer (omitted in the diagram), an active layer 5 and a contact layer (not shown in the diagram) are grown on a substrate and thereafter, a pattern is formed of a resist in such a way that etching grooves make a right angle with a laser luminescence surface and an etching is performed to form laser reflective surfaces 2. After the resist is removed, a resist is again applied and an etching is performed to form V-shaped grooves 3. After the resist is removed, a passivation film and an electrode (not shown in the diagram) are formed and chips are separated by separation surfaces 4 by cleavage to obtain semiconductor lasers. According to such a way, the noise due to the reflection of laser radiation from the bottom surfaces of the grooves is reduced. |
| 公开日期 | 1996-02-07 |
| 申请日期 | 1987-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 宮永 和恒,杉野 隆,広瀬 正則,等. 半導体レ-ザ装置の製造方法. JP1996012945B2. 1996-02-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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