Electrically pumped vertical optical cavity with improved electrical performance
文献类型：专利
| 作者 | VERMA, ASHISH K.; CHEN, ARNOLD C.; FRANCIS, DANIEL A. |
| 发表日期 | 2003-11-11 |
| 专利号 | US6647041 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Electrically pumped vertical optical cavity with improved electrical performance |
| 英文摘要 | A monolithic semiconductor device extends primarily along a vertical direction and includes the following layers. A first semiconductor layer and a second semiconductor layer form an active region between them. A third semiconductor layer is doped the same type as the second semiconductor layer but is lattice mismatched to the second semiconductor layer. The lattice mismatch results in unwanted electrical effects. An additional doping layer, preferably a delta doping layer, is located in close proximity to the interface between the second and third semiconductor layers. The delta doping layer mitigates the unwanted electrical effects introduced by the lattice mismatch. In a preferred embodiment, the device further includes a bottom mirror layer and a top mirror layer, which together form a laser cavity including the active region. |
| 公开日期 | 2003-11-11 |
| 申请日期 | 2000-05-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41767]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | VERMA, ASHISH K.,CHEN, ARNOLD C.,FRANCIS, DANIEL A.. Electrically pumped vertical optical cavity with improved electrical performance. US6647041. 2003-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。